Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs
文献类型：期刊论文
| 作者 | Yang RX ; Zhang FQ ; Chen NF |
| 刊名 | rare metals
 |
| 出版日期 | 2001 |
| 卷号 | 20期号:3页码:187-191 |
| 关键词 | semi-insulating GaAs intrinsic acceptor defects As interstitial indiffusion As pressure annealing SEMIINSULATING GAAS |
| ISSN号 | 1001-0521 |
| 通讯作者 | yang rx,hebei univ technol,tianjin 300130,peoples r china. |
| 中文摘要 | annealing was carried out at 950 and 1120 degreesc under various as pressure for undoped (nd) semi-insulating (si) lecgaas. the effects of annealing on native defects and electrical properties were investigated. experimental results indicate that, after an annealing at 950 degreesc for 14 h under low as pressure, the hall mobility decreases and the resistivity increases dramatically for the samples. these changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of as interstitial at high temperature. the generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied as pressure during annealing. the concentration of the main donor defect e12 (asgavga) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesc for 2-8 h followed by a fast cooling. the decrease in e12 concentration can also be suppressed by increasing the as pressure during annealing. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12034]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang RX,Zhang FQ,Chen NF. Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs[J]. rare metals,2001,20(3):187-191. |
| APA | Yang RX,Zhang FQ,&Chen NF.(2001).Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs.rare metals,20(3),187-191. |
| MLA | Yang RX,et al."Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs".rare metals 20.3(2001):187-191. |
入库方式： OAI收割
来源：半导体研究所
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