Statistical investigation on morphology development of gallium nitride in initial growth stage
文献类型：期刊论文
| 作者 | Yuan HR ; Lu DC ; Liu XL ; Chen Z ; Han P ; Wang XH ; Wang D |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:77-84 |
| 关键词 | atomic force microscopy crystal morphology organic vapor phase epitaxy nitrides CHEMICAL-VAPOR-DEPOSITION AIN BUFFER LAYER GAN SAPPHIRE ALN EPITAXY MOVPE |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu dc,chinese acad sci,inst semicond,lab semicond mat & sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | morphology of gallium nitride (gan) in initial growth stage was observed with atomic force microscopy (afm) and scanning electron microscopy (sem), it was found that the epilayer developed from islands to coalesced film. statistics based on afm observation was carried out to investigate the morphology characteristics. it was found that the evolution of height distribution could be used to describe morphology development. statistics also clearly revealed variation of top-face growth rate among islands. indium-doping effect on morphology development was also statistically studied. the roughening and smoothing behavior in morphology development was explained. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12036]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yuan HR,Lu DC,Liu XL,et al. Statistical investigation on morphology development of gallium nitride in initial growth stage[J]. journal of crystal growth,2002,234(1):77-84. |
| APA | Yuan HR.,Lu DC.,Liu XL.,Chen Z.,Han P.,...&Wang D.(2002).Statistical investigation on morphology development of gallium nitride in initial growth stage.journal of crystal growth,234(1),77-84. |
| MLA | Yuan HR,et al."Statistical investigation on morphology development of gallium nitride in initial growth stage".journal of crystal growth 234.1(2002):77-84. |
入库方式： OAI收割
来源：半导体研究所
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