Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Lu LW ; Fong WK ; Zhu CF ; Leung BH ; Surya C ; Wang J ; Ge WK |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:99-104 |
| 关键词 | characterization molecular beam epitaxy semiconducting materials STRAIN |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu lw,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a detailed characterisation study of gan thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (itbl) was carried out with hall, photoluminescence (pl) and deep-level transient fourier spectroscopy (dltfs) techniques. the unique feature of our gan thin films is that the gan epitaxial layers are grown on top of a double layer that consists of an itbl, which is grown at 690 degreesc, and a conventional low-temperature buffer layer deposited at 500 degreesc. it is observed that the electron mobility increases steadily with the thickness of the itbl, which peaks at 377 cm(2)v(-1)s(-1) for an itbl thickness of 800 nm. the pl also demonstrated systematic improvements with the thickness of the itbl. the dltfs results suggest a three-order-of-magnitude reduction in the deep level at e-c-0.40 ev in the device fabricated with the gan films grown on an itbl thickness of 1.25 mum in comparison with the control device without an itbl. our analyses indicate that the utilization of an itbl in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (c) 2002 elsevier science bn. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12040]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu LW,Fong WK,Zhu CF,et al. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy[J]. journal of crystal growth,2002,234(1):99-104. |
| APA | Lu LW.,Fong WK.,Zhu CF.,Leung BH.,Surya C.,...&Ge WK.(2002).Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy.journal of crystal growth,234(1),99-104. |
| MLA | Lu LW,et al."Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy".journal of crystal growth 234.1(2002):99-104. |
入库方式： OAI收割
来源：半导体研究所
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