A geometrical model of GaN morphology in initial growth stage
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:115-120 |
| 关键词 | computer simulation crystal morphology atomic force microscopy nitrides AIN BUFFER LAYER SAPPHIRE |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on gan in initial growth stage. four parameters were introduced to describe the morphology characteristics in this model. least-square fitting of height distribution was performed. the height distribution derived from the model agreed well with that obtained from experimental records. it was also found that the model should be further advanced to understand the growth of gan in initial growth stage. (c) 2002 elsevier science by. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12042]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. A geometrical model of GaN morphology in initial growth stage[J]. journal of crystal growth,2002,234(1):115-120. |
| APA | Han PD.(2002).A geometrical model of GaN morphology in initial growth stage.journal of crystal growth,234(1),115-120. |
| MLA | Han PD."A geometrical model of GaN morphology in initial growth stage".journal of crystal growth 234.1(2002):115-120. |
入库方式： OAI收割
来源：半导体研究所
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