Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
文献类型：期刊论文
| 作者 | Lu DC ; Duan SK |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2002 |
| 卷号 | 234期号:1页码:145-152 |
| 关键词 | computer simulation molecular vapor phase epitaxy nitrides semiconducting quaternary alloys CHEMICAL-VAPOR-DEPOSITION QUATERNARY ALLOYS PHASE EPITAXY GAN ALINGAN |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a quasi-thermodynamic model of metalorganic vapor phase epitaxy (movpe) growth of gaxalyin1-x-yn alloys has been proposed. in view of the complex growth behavior of gaxalyin1-x-yn, we focus our attention on the galliumrich quaternary alloys that are lattice matched to gan, in0.15ga0.85n or al0.15ga0.85n, which are widely used in the gan-based optoelectronic devices. the relationship between gaalinn alloy composition and input molar ratio of group iii metalorganic compounds at various growth conditions has been calculated. the influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group iii metalorganics, reactor pressure, v/iii ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. based on these calculated results, we can find out the appropriate growth conditions for the movpe growth of gaxalyin1-x-yn alloy lattice matched to gan, in0.15ga0.85n or al0.15ga0.85n. (c) 2002 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12044]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu DC,Duan SK. Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN[J]. journal of crystal growth,2002,234(1):145-152. |
| APA | Lu DC,&Duan SK.(2002).Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN.journal of crystal growth,234(1),145-152. |
| MLA | Lu DC,et al."Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN".journal of crystal growth 234.1(2002):145-152. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。