Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate
文献类型：期刊论文
| 作者 | Liu BL ; Liu B ; Xu ZY ; Ge WK |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:10页码:5111-5114 |
| 关键词 | MOLECULAR-BEAM EPITAXY CORRUGATED GAAS/ALAS SUPERLATTICES RADIATIVE LIFETIMES WELLS RECOMBINATION SURFACES DEPENDENCE DOTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | liu bl,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | using time-resolved photoluminescence (pl) measurements, we have studied the exciton localization effect in ingaas/gaas quantum wire (qwr) structures formed in corrugated narrow ingaas/gaas quantum wells (qws) grown on (553)b gaas substrate. the pl decay time in the qwr structure was found to be independent of the temperature for t < 70 k, showing a typical dynamical behavior of the localized excitons. this result is in striking contrast to the corresponding quantum well structures, where a linear increase of the pl decay time was observed. in addition, an increase of the exciton lifetime was observed at low temperature for the qwr structure as compared to a reference ingaas/gaas quantum well sample (1200 vs 400 ps). the observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the qwr-like structure. in pl measurements, a significant polarization anisotropy was also found in our narrow ingaas/gaas qws grown on (553)b gaas. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12048]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu BL,Liu B,Xu ZY,et al. Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate[J]. journal of applied physics,2001,90(10):5111-5114. |
| APA | Liu BL,Liu B,Xu ZY,&Ge WK.(2001).Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate.journal of applied physics,90(10),5111-5114. |
| MLA | Liu BL,et al."Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate".journal of applied physics 90.10(2001):5111-5114. |
入库方式： OAI收割
来源：半导体研究所
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