Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces
文献类型:期刊论文
作者 | Shen WZ ; Jiang LF ; Yu G ; Lai ZY ; Wang XG ; Shen SC ; Cao X |
刊名 | journal of applied physics |
出版日期 | 2001 |
卷号 | 90期号:10页码:5444-5446 |
ISSN号 | 0021-8979 |
关键词 | FAR-INFRARED DETECTORS SI-DOPED GAAS PHOTOLUMINESCENCE LAYERS |
通讯作者 | shen wz,shanghai jiao tong univ,dept phys,lab condensed matter spect & optoelect phys,1954 hua shan rd,shanghai 200030,peoples r china. |
中文摘要 | in this communication, we have carried out a detailed investigation of radiative recombination in n-gaas homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. the observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. a photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (c) 2001 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12050] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Shen WZ,Jiang LF,Yu G,et al. Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces[J]. journal of applied physics,2001,90(10):5444-5446. |
APA | Shen WZ.,Jiang LF.,Yu G.,Lai ZY.,Wang XG.,...&Cao X.(2001).Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces.journal of applied physics,90(10),5444-5446. |
MLA | Shen WZ,et al."Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces".journal of applied physics 90.10(2001):5444-5446. |
入库方式: OAI收割
来源:半导体研究所
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