Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields
文献类型：期刊论文
| 作者 | Wang YJ ; Leem YA ; McCombe BD ; Wu XG ; Peeters FM ; Jones ED ; Reno JR ; Lee XY ; Jiang HW |
| 刊名 | physical review b
 |
| 出版日期 | 2001 |
| 卷号 | 64期号:16页码:art.no.161303 |
| 关键词 | POLARON-CYCLOTRON-RESONANCE GAAS-ALAS SUPERLATTICES PHONON MODES HETEROSTRUCTURES |
| ISSN号 | 1098-0121 |
| 通讯作者 | wang yj,florida state univ,natl high magnet field lab,tallahassee,fl 32310 usa. |
| 中文摘要 | electron cyclotron resonance cr) measurements have been carried out in magnetic fields up to 32 t to study electron-phonon interaction in two heavily modulation-delta -doped gaas/al0.3ga0.7as single-quantum-well samples. no measurable resonant magnetopolaron effects were observed in either sample in the region of the gaas longitudinal optical (lo) phonons. however, when the cr frequency is above lo phonon frequency, omega (lo)=e-lo/(h) over bar, at high magnetic fields (b>27 t), electron cr exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (lo)+ (e-2-e-1)1 (h) over bar, where e-2, and e-1 are the energies of the bottoms of the second and the first subbands, respectively. the energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 t. a detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the cr, shows that this type of splitting is due to a three-level resonance between the second landau level of the first electron subband and the lowest landau level of the second subband plus one gaas lo phonon. the absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. excellent agreement between the theory and the experimental results is obtained. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12054]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YJ,Leem YA,McCombe BD,et al. Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields[J]. physical review b,2001,64(16):art.no.161303. |
| APA | Wang YJ.,Leem YA.,McCombe BD.,Wu XG.,Peeters FM.,...&Jiang HW.(2001).Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields.physical review b,64(16),art.no.161303. |
| MLA | Wang YJ,et al."Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields".physical review b 64.16(2001):art.no.161303. |
入库方式： OAI收割
来源：半导体研究所
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