Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
文献类型:期刊论文
作者 | Feng Y ; Zhu M ; Liu F ; Liu J ; Han H ; Han Y |
刊名 | thin solid films
![]() |
出版日期 | 2001 |
卷号 | 395期号:1-2页码:213-216 |
关键词 | poly-Si structure hot-wire plasma-enhanced chemical vapor deposition (PECVD) CHEMICAL-VAPOR-DEPOSITION MICROCRYSTALLINE SILICON HYDROGEN |
ISSN号 | 0040-6090 |
通讯作者 | zhu m,chinese acad sci,grad sch,dept phys,pob 3908,beijing 100039,peoples r china. |
中文摘要 | tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (pecvd) system as a catalyzer: we name this technique 'hot-wire-assisted pecvd' (hw-pecvd). under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (t-f) on the structural properties of the poly-si films have been characterized by x-ray diffraction (xrd), raman scattering and fourier-transform infrared (ftir) spectroscopy. compared with conventional pecvd, the grain size, crystalline volume fraction (x-e) and deposition rate were all enhanced when a high t-f was used. the best poly-si film exhibits a preferential (220) orientation, with a full width at half-maximum (fwhm) of 0.2 degrees. the si-si to peak of the raman scattering spectrum is located at 519.8 cm(-1) with a fwhm of 7.1 cm(-1). the x-c is 0.93. these improvements are mainly the result of promotion of the dissociation of sih4 and an increase in the atomic h concentration in the gas phase. (c) 2001 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12056] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Feng Y,Zhu M,Liu F,et al. Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD[J]. thin solid films,2001,395(1-2):213-216. |
APA | Feng Y,Zhu M,Liu F,Liu J,Han H,&Han Y.(2001).Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD.thin solid films,395(1-2),213-216. |
MLA | Feng Y,et al."Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD".thin solid films 395.1-2(2001):213-216. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。