Increasing the photoluminescence intensity of Ge islands by chemical etching
文献类型：期刊论文
| 作者 | Gao F ; Huang CJ ; Huang DD ; Li JP ; Kong MY ; Zeng YP ; Li JM ; Lin LY |
| 刊名 | chinese physics
 |
| 出版日期 | 2001 |
| 卷号 | 10期号:10页码:966-969 |
| 关键词 | Ge islands chemical etching photoluminescence Si2H6-Ge molecular beam epitaxy QUANTUM DOTS |
| ISSN号 | 1009-1963 |
| 通讯作者 | gao f,shaanxi normal univ,dept phys,xian 710062,peoples r china. |
| 中文摘要 | self-assembled ge islands were grown on si(100) substrate by si2h6-ge molecular beam epitaxy. after being subjected to chemical etching, it is found that the photoluminescence from the etched ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited ge islands. this behaviour was explained by the effect of chemical etching on the morphology of the ge islands. our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12070]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao F,Huang CJ,Huang DD,et al. Increasing the photoluminescence intensity of Ge islands by chemical etching[J]. chinese physics,2001,10(10):966-969. |
| APA | Gao F.,Huang CJ.,Huang DD.,Li JP.,Kong MY.,...&Lin LY.(2001).Increasing the photoluminescence intensity of Ge islands by chemical etching.chinese physics,10(10),966-969. |
| MLA | Gao F,et al."Increasing the photoluminescence intensity of Ge islands by chemical etching".chinese physics 10.10(2001):966-969. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。