中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

文献类型:期刊论文

作者Guo X ; Shen GD ; Wang GH ; Zhu WJ ; Du JY ; Gao G ; Zou DS ; Chen YH ; Ma XY ; Chen LH
刊名applied physics letters
出版日期2001
卷号79期号:18页码:2985-2986
ISSN号0003-6951
通讯作者guo x,beijing polytech univ,inst informat,beijing 100022,peoples r china.
中文摘要tunnel-regenerated multiple-active-region (trmar) light-emitting diodes (leds) with high quantum efficiency and high brightness have been proposed and fabricated. we have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such trmar leds scaled linearly approximately with the number of the active regions. the on-axis luminous intensity of such trmar leds with only 3 mum gap current spreading layer have exceeded 5 cd at 20 ma dc operation under 15 degrees package. the high-quantum-efficiency and high-brightness leds under the low injection level were realized. (c) 2001 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12074]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Guo X,Shen GD,Wang GH,et al. Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency[J]. applied physics letters,2001,79(18):2985-2986.
APA Guo X.,Shen GD.,Wang GH.,Zhu WJ.,Du JY.,...&Chen LH.(2001).Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency.applied physics letters,79(18),2985-2986.
MLA Guo X,et al."Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency".applied physics letters 79.18(2001):2985-2986.

入库方式: OAI收割

来源:半导体研究所

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