Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency
文献类型:期刊论文
| 作者 | Guo X ; Shen GD ; Wang GH ; Zhu WJ ; Du JY ; Gao G ; Zou DS ; Chen YH ; Ma XY ; Chen LH |
| 刊名 | applied physics letters
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| 出版日期 | 2001 |
| 卷号 | 79期号:18页码:2985-2986 |
| ISSN号 | 0003-6951 |
| 通讯作者 | guo x,beijing polytech univ,inst informat,beijing 100022,peoples r china. |
| 中文摘要 | tunnel-regenerated multiple-active-region (trmar) light-emitting diodes (leds) with high quantum efficiency and high brightness have been proposed and fabricated. we have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such trmar leds scaled linearly approximately with the number of the active regions. the on-axis luminous intensity of such trmar leds with only 3 mum gap current spreading layer have exceeded 5 cd at 20 ma dc operation under 15 degrees package. the high-quantum-efficiency and high-brightness leds under the low injection level were realized. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12074] ![]() |
| 专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
| 推荐引用方式 GB/T 7714 | Guo X,Shen GD,Wang GH,et al. Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency[J]. applied physics letters,2001,79(18):2985-2986. |
| APA | Guo X.,Shen GD.,Wang GH.,Zhu WJ.,Du JY.,...&Chen LH.(2001).Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency.applied physics letters,79(18),2985-2986. |
| MLA | Guo X,et al."Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency".applied physics letters 79.18(2001):2985-2986. |
入库方式: OAI收割
来源:半导体研究所
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