InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:7页码:3437-3441 |
| 关键词 | APPLIED ELECTRIC-FIELD INTERSUBBAND TRANSITIONS MULTIQUANTUM WELLS PHOTODETECTORS |
| ISSN号 | 0021-8979 |
| 通讯作者 | wu wg,univ calif los angeles,dept elect engn,los angeles,ca 90095 usa. |
| 中文摘要 | inxga1-xas/alyga1-yas/alzga1-zas asymmetric step quantum-well middle wavelength (3-5 mum) infrared detectors are fabricated. the components display photovoltaic-type photocurrent response as well as the bias-controlled modulation of the peak wavelength of the main response, which is ascribed to the stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3-5.3 mum infrared atmospheric transmission window. the blackbody detectivity (d-bb*) of the detectors reaches to about 1.0x10(10) cm hz(1/2)/w at 77 k under bias of +/-7 v. by expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective-mass envelope-function theory, the linear stark effects of the intersubband transitions between the ground and first excited states in the asymmetric step well are calculated. the obtained results agree well with the corresponding experimental measurements. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12088]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors[J]. journal of applied physics,2001,90(7):3437-3441. |
| APA | Jiang DS.(2001).InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors.journal of applied physics,90(7),3437-3441. |
| MLA | Jiang DS."InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors".journal of applied physics 90.7(2001):3437-3441. |
入库方式： OAI收割
来源：半导体研究所
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