Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
文献类型：期刊论文
| 作者 | Cao X ; Zeng YP ; Kong MY ; Pan LA ; Wang BQ ; Zhu ZP ; Wang XG ; Chang Y ; Chu JH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 231期号:4页码:520-524 |
| 关键词 | molecular beam epitaxy semiconducting III-V materials high electron mobility transistors ELECTRON-MOBILITY TRANSISTOR CARRIER DENSITY QUANTUM-WELLS BAND-GAP |
| ISSN号 | 0022-0248 |
| 通讯作者 | cao x,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the photoluminescence spectra of the single delta -doped algaas/ingaas/gaas pseudomorphic hemts with different thickness of spacer layer were studied. there are two peaks in the pl spectra of the structure corresponding to two sub-energy levels of the ingaas quantum well. it was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic hemts. the reasons were discussed. the possible use of this phenomenon in optimization of pseudomorphic hemts was also proposed. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12098]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cao X,Zeng YP,Kong MY,et al. Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer[J]. journal of crystal growth,2001,231(4):520-524. |
| APA | Cao X.,Zeng YP.,Kong MY.,Pan LA.,Wang BQ.,...&Chu JH.(2001).Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer.journal of crystal growth,231(4),520-524. |
| MLA | Cao X,et al."Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer".journal of crystal growth 231.4(2001):520-524. |
入库方式： OAI收割
来源：半导体研究所
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