Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD
文献类型：期刊论文
| 作者 | Zheng XH ; Qu B ; Wang YT ; Feng ZH ; Han JY ; Yang H ; Liang JW |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 233期号:1-2页码:52-56 |
| 关键词 | X-ray diffraction metalorganic chemical vapor deposition gallium compounds HEXAGONAL GAN CUBIC GAN GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zheng xh,chinese acad sci,inst semicond,r&d ctr optoelec technol,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a determination of {1 1 1}a and {1 1 1}b in cubic gan(c-gan) was investigated by x-ray diffraction technique in detail. the c-gan films are grown on gaas(0 0 1) substrates by metalorganic chemical vapor deposition(mocvd). the difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}a and {1 1 1}b planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}a and which is the {1 1 1}b planes. the lesser deviation between the ratios of /f-h k l/(2)//f-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal gan(h-gan) grown on c-gan{1 1 1}a planes is higher than that on {1 1 1}b planes. the reciprocal space mappings provide additional proof that the h-gan inclusions in c-gan films appear as lamellar structure. (c) 2001 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12102]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng XH,Qu B,Wang YT,et al. Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD[J]. journal of crystal growth,2001,233(1-2):52-56. |
| APA | Zheng XH.,Qu B.,Wang YT.,Feng ZH.,Han JY.,...&Liang JW.(2001).Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD.journal of crystal growth,233(1-2),52-56. |
| MLA | Zheng XH,et al."Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD".journal of crystal growth 233.1-2(2001):52-56. |
入库方式： OAI收割
来源：半导体研究所
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