Photoluminescence of rapid-thermal annealed Mg-doped GaN films
文献类型：期刊论文
| 作者 | Wang LS ; Fong WK ; Surya C ; Cheah KW ; Zheng WH ; Wang ZG |
| 刊名 | solid-state electronics
 |
| 出版日期 | 2001 |
| 卷号 | 45期号:7页码:1153-1157 |
| 关键词 | p-type GaN metalorganic chemical vapor deposition photoluminescence X-ray diffraction rapid-thermal annealing P-TYPE GAN RECOMBINATION EMISSION ENERGY BANDS |
| ISSN号 | 0038-1101 |
| 通讯作者 | surya c,hong kong polytech univ,dept elect & informat engn,yuk choi rd,hund hom,kowloon,hong kong,peoples r china. |
| 中文摘要 | we report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in mg-doped gan epitaxial layers grown on sapphire by metalorganic chemical vapor deposition, the objective is to examine the effects of rapid-thermal annealing on mg-related emissions. it is observed that the peak position of the 2.7-2.8 ev emission line is a function of the device temperature and annealing conditions, the phenomenon is attributed to coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the mg-related complex dissociation. the blue shift of the 2.7-2.8 ev emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. in addition, quenching of minor peaks at 3.2 and 3.3 ev are observed and their possible origin is discussed. (c) 2001 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12104]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang LS,Fong WK,Surya C,et al. Photoluminescence of rapid-thermal annealed Mg-doped GaN films[J]. solid-state electronics,2001,45(7):1153-1157. |
| APA | Wang LS,Fong WK,Surya C,Cheah KW,Zheng WH,&Wang ZG.(2001).Photoluminescence of rapid-thermal annealed Mg-doped GaN films.solid-state electronics,45(7),1153-1157. |
| MLA | Wang LS,et al."Photoluminescence of rapid-thermal annealed Mg-doped GaN films".solid-state electronics 45.7(2001):1153-1157. |
入库方式： OAI收割
来源：半导体研究所
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