Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation
文献类型：期刊论文
| 作者 | Luo XD ; Xu ZY ; Ge WK ; Pan Z ; Li LH ; Lin YW |
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 79期号:7页码:958-960 |
| 关键词 | MOLECULAR-BEAM EPITAXY BAND-GAP ENERGY TEMPERATURE PHOTOLUMINESCENCE MECHANISM GANXAS1-X EMISSION NITROGEN ALLOYS SHIFT GANAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | luo xd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | under short pulse laser excitation, we have observed an extra high-energy photoluminescence (pl) emission from ganas/gaas single quantum wells (qws). it dominates the pl spectra under high excitation and/or at high temperature. by measuring the pl dependence on both temperature and excitation power and by analyzing the time-resolved pl results, we have attributed the pl peak to the recombination of delocalized excitons in qws. furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent pl spectra under the short pulse excitation. this competition is believed to be responsible for the temperature-induced s-shaped pl shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12124]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo XD,Xu ZY,Ge WK,et al. Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation[J]. applied physics letters,2001,79(7):958-960. |
| APA | Luo XD,Xu ZY,Ge WK,Pan Z,Li LH,&Lin YW.(2001).Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation.applied physics letters,79(7),958-960. |
| MLA | Luo XD,et al."Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation".applied physics letters 79.7(2001):958-960. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。