Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | physical review b
 |
| 出版日期 | 2001 |
| 卷号 | 64期号:4页码:art.no.045317 |
| 关键词 | SPECTROSCOPY |
| ISSN号 | 0163-1829 |
| 通讯作者 | panev n,univ lund,box 118,s-22100 lund,sweden. |
| 中文摘要 | we have investigated random telegraph noise in the photoluminescence from ingaas quantum dots in gaas. dots switching among two and three levels have been measured. the experiments show that the switching ingaas dots behave very similarly to switching inp dots in gainp. but differently from the more commonly investigated colloidal dots. the switching is attributed to defects, and we show that the switching can be used as a monitor of the defect. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12126]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs[J]. physical review b,2001,64(4):art.no.045317. |
| APA | Xu B.(2001).Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs.physical review b,64(4),art.no.045317. |
| MLA | Xu B."Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs".physical review b 64.4(2001):art.no.045317. |
入库方式： OAI收割
来源：半导体研究所
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