中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal redistribution of photocarriers between bimodal quantum dots

文献类型:期刊论文

作者Ye XL; Xu B
刊名journal of applied physics
出版日期2001
卷号90期号:4页码:1973-1976
关键词TEMPERATURE-DEPENDENCE CARRIER RELAXATION EMISSION
ISSN号0021-8979
通讯作者zhang yc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要we study the photoluminescence (pl) properties of inas/gaas self-assembled quantum dots (qds) by varying excitation power and temperature. excitation power-dependent pl shows that there exists bimodal size distribution in the qd ensemble. thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative pl intensity. based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (c) 2001 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12130]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Ye XL,Xu B. Thermal redistribution of photocarriers between bimodal quantum dots[J]. journal of applied physics,2001,90(4):1973-1976.
APA Ye XL,&Xu B.(2001).Thermal redistribution of photocarriers between bimodal quantum dots.journal of applied physics,90(4),1973-1976.
MLA Ye XL,et al."Thermal redistribution of photocarriers between bimodal quantum dots".journal of applied physics 90.4(2001):1973-1976.

入库方式: OAI收割

来源:半导体研究所

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