Thermal redistribution of photocarriers between bimodal quantum dots
文献类型:期刊论文
作者 | Ye XL![]() ![]() |
刊名 | journal of applied physics
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出版日期 | 2001 |
卷号 | 90期号:4页码:1973-1976 |
关键词 | TEMPERATURE-DEPENDENCE CARRIER RELAXATION EMISSION |
ISSN号 | 0021-8979 |
通讯作者 | zhang yc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | we study the photoluminescence (pl) properties of inas/gaas self-assembled quantum dots (qds) by varying excitation power and temperature. excitation power-dependent pl shows that there exists bimodal size distribution in the qd ensemble. thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative pl intensity. based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (c) 2001 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12130] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ye XL,Xu B. Thermal redistribution of photocarriers between bimodal quantum dots[J]. journal of applied physics,2001,90(4):1973-1976. |
APA | Ye XL,&Xu B.(2001).Thermal redistribution of photocarriers between bimodal quantum dots.journal of applied physics,90(4),1973-1976. |
MLA | Ye XL,et al."Thermal redistribution of photocarriers between bimodal quantum dots".journal of applied physics 90.4(2001):1973-1976. |
入库方式: OAI收割
来源:半导体研究所
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