Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:4页码:2048-2050 |
| 关键词 | MOLECULAR-BEAM EPITAXY LASER-DIODES PHOTOLUMINESCENCE THRESHOLD EMISSION |
| ISSN号 | 0021-8979 |
| 通讯作者 | liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the effect of growth temperature on the optical properties of self-assembled in0.65al0.35as/al0.35ga0.65as quantum dots is studied using photoluminescence and electroluminescence spectra. with the growth temperature increasing from 530 to 560 degreesc, the improvement of optical and structural quality has been observed. furthermore, edge-emitting laser diodes with three stacked inalas quantum dot layers grown at different temperature are processed, respectively. for samples with quantum dots grown at 560 degreesc, the continuous wave operation is obtained up to 220 k, which is much higher than that of ones with inalas islands grown at 530 degreesc and that of the short-wavelength quantum-dot laser previously reported. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12132]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots[J]. journal of applied physics,2001,90(4):2048-2050. |
| APA | Xu B,&Ye XL.(2001).Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots.journal of applied physics,90(4),2048-2050. |
| MLA | Xu B,et al."Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots".journal of applied physics 90.4(2001):2048-2050. |
入库方式： OAI收割
来源：半导体研究所
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