In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:3页码:1266-1270 |
| ISSN号 | 0021-8979 |
| 关键词 | ZINCBLENDE SEMICONDUCTORS DIFFERENCE SPECTROSCOPY INVERSION ASYMMETRY COMMON-ATOM LIGHT-HOLE HETEROSTRUCTURES INTERFACE |
| 通讯作者 | ye xl,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) gaas/al(ga)as superlattices (sls). the anisotropy spectra of the symmetric and the asymmetric sls show significant difference: for symmetric ones, the anisotropies of the 1hh-->1e transition (1h1e) and 1l1e are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1h1e is much less than that of 1l1e and 2h1e, and the anisotropy of 3h2e is very strong. the calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12138]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells[J]. journal of applied physics,2001,90(3):1266-1270. |
| APA | Xu B,&Ye XL.(2001).In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells.journal of applied physics,90(3),1266-1270. |
| MLA | Xu B,et al."In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells".journal of applied physics 90.3(2001):1266-1270. |
入库方式： OAI收割
来源：半导体研究所
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