MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
文献类型：期刊论文
| 作者 | Yang JL ; Chen NF ; Liu ZK ; Yang SY ; Chai CL ; Liao MY ; He HJ |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 226期号:4页码:517-520 |
| 关键词 | X-ray diffraction ion beam epitaxy semiconducting manganese silicide SEMICONDUCTING SILICIDES THIN-FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | semiconducting manganese silicide, mn27si47 and mn15si26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique, auger electron spectroscopy depth profiles showed that some of the mn ions were deposited on single-crystal silicon substrate and formed a 37.5 nm thick mn film, and the other mn ions were successfully implanted into the si substrate with the implantation depth of 618 nm. some samples were annealed in the atmosphere of flowing n-2 at 840 degreesc. x-ray diffraction measurements showed that the annealing was beneficial to the formation of mn27si47 and mn15si26 (c) 2001 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12142]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang JL,Chen NF,Liu ZK,et al. MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique[J]. journal of crystal growth,2001,226(4):517-520. |
| APA | Yang JL.,Chen NF.,Liu ZK.,Yang SY.,Chai CL.,...&He HJ.(2001).MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique.journal of crystal growth,226(4),517-520. |
| MLA | Yang JL,et al."MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique".journal of crystal growth 226.4(2001):517-520. |
入库方式： OAI收割
来源：半导体研究所
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