Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams
文献类型：期刊论文
| 作者 | Liao MY ; Qin FG ; Chai CL ; Liu ZK ; Yang SY ; Yao ZY ; Wang ZG |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2001 |
| 卷号 | 50期号:7页码:1324-1328 |
| 关键词 | amorphous carbon surface morphology mass-selected low energy ion beam deposition TETRAHEDRAL AMORPHOUS-CARBON BIAS-ENHANCED NUCLEATION ATOMIC-FORCE MICROSCOPY DIAMOND-LIKE CARBON SILICON GROWTH MODEL |
| ISSN号 | 1000-3290 |
| 通讯作者 | liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | carbon films were deposited by mass-selected ion beam technique with ion energies 50-200ev at a substrate temperature from room temperature to 80 degreesc,. for the energies used, smooth diamond-like carbon films were deposited at room temperature. when the substrate temperature was 600 degreesc,rough graphitic films were produced. but highly oriented carbon tubes were observed when the energies were larger than 140ev at 800 degreesc. they were perpendicular to the surface and parallel to each other. preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. shallow ion implantation and stress are responsible for this orientation. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12148]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liao MY,Qin FG,Chai CL,et al. Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams[J]. acta physica sinica,2001,50(7):1324-1328. |
| APA | Liao MY.,Qin FG.,Chai CL.,Liu ZK.,Yang SY.,...&Wang ZG.(2001).Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams.acta physica sinica,50(7),1324-1328. |
| MLA | Liao MY,et al."Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams".acta physica sinica 50.7(2001):1324-1328. |
入库方式： OAI收割
来源：半导体研究所
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