The effects of pre-irradiation on the formation of Si1-xCx alloys
文献类型：期刊论文
| 作者 | Wang YS ; Li JM ; Wang YB ; Wang YT ; Sun GS ; Lin LY |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2001 |
| 卷号 | 50期号:7页码:1329-1333 |
| 关键词 | ion implantation solid phase epitaxy Si1-xCx alloy SI IMPLANTATION CARBON |
| ISSN号 | 1000-3290 |
| 通讯作者 | wang ys,beijing normal univ,dept phys,beijing 100875,peoples r china. |
| 中文摘要 | carbon ions were implanted into crystal si to a concentration of (0.6-1.5)at% at room temperature. some samples were pre-irradiated with s-29(i)+ ions, while others were not pre-irradiated. then the two kinds of samples were implanted with c-12(+) ions simultaneously, and si1-xcx alloys were grown by solid phase epitaxy with high-temperature annealing. the effects of preirradiation on the formation of si1-xcx alloys were studied. if the dose of implanted c ion was less than that for amorphizing si crystals, the implanted c atoms would like to combine with defects produced during implantation, and then it was difficult for si1-xcx alloys to form after annealine, at 950 degreesc. pre-irradiation was advantageous for si1-xcx alloy formation. with the increase of c ion dose, the damage produced by c ions increased. pre-irradiation was unfavorable for si1-xcx, alloy formation. if the implanted c concentration was higher than that for solid phase epitaxy solution, only part of the implanted c atoms form si1-xcx alloys and the effects of pre-irradiation could be neglected. as the annealing temperature was increased to 1050 degreesc, si1-xcx alloys in both pre-irradiated and unpreirradiated samples of low c concentration remained, whereas most part of si1-xcx alloys in samples with high c concentration vanished. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12150]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YS,Li JM,Wang YB,et al. The effects of pre-irradiation on the formation of Si1-xCx alloys[J]. acta physica sinica,2001,50(7):1329-1333. |
| APA | Wang YS,Li JM,Wang YB,Wang YT,Sun GS,&Lin LY.(2001).The effects of pre-irradiation on the formation of Si1-xCx alloys.acta physica sinica,50(7),1329-1333. |
| MLA | Wang YS,et al."The effects of pre-irradiation on the formation of Si1-xCx alloys".acta physica sinica 50.7(2001):1329-1333. |
入库方式： OAI收割
来源：半导体研究所
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