中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices

文献类型:期刊论文

作者Yu R ; Zhu BF ; Wang QM
刊名journal of physics-condensed matter
出版日期2001
卷号13期号:24页码:l559-l567
关键词ZINCBLENDE SEMICONDUCTORS QUANTUM-WELLS ELECTRONIC-STRUCTURE INVERSION ASYMMETRY HETEROSTRUCTURES INTERFACES FIELD
ISSN号0953-8984
通讯作者yu r,tsing hua univ,ctr adv study,beijing 100084,peoples r china.
中文摘要a trilayer asymmetric superlattice, si/si1-xgex/si1-ygey, is proposed, in which the broken inversion symmetry makes the microstructure optically biaxial; in particular, inequivalent interfaces in this heterostructure may cause a polarization ratio as large as about 2.5% in the absence of an external field. the electronic structure and absorption spectra for two types of trilayer superlattice with different parameters are calculated by use of the tight-binding model; the findings indicate the importance of the carrier confinement for the anisotropy value. the effect of external electric field on the optical anisotropy for such structures has also been discussed, and a pockels coefficient of 10-9 cm v-1 estimated.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12158]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
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Yu R,Zhu BF,Wang QM. In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices[J]. journal of physics-condensed matter,2001,13(24):l559-l567.
APA Yu R,Zhu BF,&Wang QM.(2001).In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices.journal of physics-condensed matter,13(24),l559-l567.
MLA Yu R,et al."In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices".journal of physics-condensed matter 13.24(2001):l559-l567.

入库方式: OAI收割

来源:半导体研究所

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