High-quality metamorphic HEMT grown on GaAs substrates by MBE
文献类型：期刊论文
| 作者 | Zeng YP ; Cao X ; Cui LJ ; Kong MY ; Pan L ; Wang BQ ; Zhu ZP |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:210-213 |
| ISSN号 | 0022-0248 |
| 关键词 | molecular beam epitaxy high electron mobility transistors DENSITY |
| 通讯作者 | cao x,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | metamorphic high electron mobility transistor (m-hemt) structures have been grown on gaas substrates by molecular beam epitaxy (mbe). linearly graded and the step-graded ingaas and inalas buffet layers hal e been compared, and tem, pl and low-temperature hall have been used to analyze the properties of the buffer layers and the m-hemt structure. for a single-delta-doped m-hemt structure with an in0.53ga0.47as channel layer and a 0.8 mum step-graded inalas buffer layer, room-temperature mobility of 9000 cm(2)/v s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. these results are nearly equivalent to those obtained for the same structure grown on an inp substrate. a basic m-hemt device with 1 mum gate was fabricated, and g(m) is larger than 400 ms/mm. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12164]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng YP,Cao X,Cui LJ,et al. High-quality metamorphic HEMT grown on GaAs substrates by MBE[J]. journal of crystal growth,2001,227(0):210-213. |
| APA | Zeng YP.,Cao X.,Cui LJ.,Kong MY.,Pan L.,...&Zhu ZP.(2001).High-quality metamorphic HEMT grown on GaAs substrates by MBE.journal of crystal growth,227(0),210-213. |
| MLA | Zeng YP,et al."High-quality metamorphic HEMT grown on GaAs substrates by MBE".journal of crystal growth 227.0(2001):210-213. |
入库方式： OAI收割
来源：半导体研究所
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