Hydrogen behavior in GaN epilayers grown by NH3-MBE
文献类型：期刊论文
| 作者 | Kong MY ; Zhang JP ; Wang XL ; Sun DZ |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:371-375 |
| 关键词 | impurities molecular beam epitaxy nitrides semiconducting III-V materials GALLIUM NITRIDE SAPPHIRE SUBSTRATE DEFECTS HETEROSTRUCTURE SEMICONDUCTORS STRESS |
| ISSN号 | 0022-0248 |
| 通讯作者 | kong my,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | hydrogen behavior in unintentionally doped gan epilayers on sapphire substrates grown by nh3-mbe is investigated. firstly, we find by using nuclear reaction analysis (nra) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped gan, secondly, fourier transform infrared (ftir) absorption and x-ray photoelectron spectroscopy (xps) reveal further that hydrogen atom is bound to nitrogen atom in gan with a local vibrational mode at about 3211 cm(-1) hence, it is presumed that the hydrogen-related complex ga. . .h-n is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in gan films. finally, raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases gan films suffer from serious tensile biaxial strain. this anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12166]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Kong MY,Zhang JP,Wang XL,et al. Hydrogen behavior in GaN epilayers grown by NH3-MBE[J]. journal of crystal growth,2001,227(0):371-375. |
| APA | Kong MY,Zhang JP,Wang XL,&Sun DZ.(2001).Hydrogen behavior in GaN epilayers grown by NH3-MBE.journal of crystal growth,227(0),371-375. |
| MLA | Kong MY,et al."Hydrogen behavior in GaN epilayers grown by NH3-MBE".journal of crystal growth 227.0(2001):371-375. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。