Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zheng LX ; Xie MH ; Xu SJ ; Cheung SH ; Tong SY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:376-380 |
| 关键词 | surface processes molecular beam epitaxy nitrides semiconducting gallium compounds GAN(0001) SURFACES RECONSTRUCTIONS |
| ISSN号 | 0022-0248 |
| 通讯作者 | xie mh,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china. |
| 中文摘要 | the influence of electric fields on surface migration of gallium (ga) and nitrogen (n) adatoms is studied during gan growth by molecular beam epitaxy (mbe). when a direct current (dc) is used to heat the sample, long distance migration of ga adatoms and diffusion asymmetry of n adatoms at steps are observed. on the other hand, if an alternating current (ac) is used, no such preferential adatom migration is found. this effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. the implications of such current-induced surface migration to gan epitaxy are subsequently investigated. it is seen to firstly change the distribution of ga adatoms on a growing surface, and thus make the growth to be ga-limited at one side of the sample but n-limited at the other side. this leads to different optical qualities of the film and different morphologies of the surface. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12168]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng LX,Xie MH,Xu SJ,et al. Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy[J]. journal of crystal growth,2001,227(0):376-380. |
| APA | Zheng LX,Xie MH,Xu SJ,Cheung SH,&Tong SY.(2001).Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy.journal of crystal growth,227(0),376-380. |
| MLA | Zheng LX,et al."Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy".journal of crystal growth 227.0(2001):376-380. |
入库方式： OAI收割
来源：半导体研究所
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