High-quality GaN grown by gas-source MBE
文献类型：期刊论文
| 作者 | Wang JX ; Sun DZ ; Wang XL ; Li JM ; Zeng YP ; Hou X ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:386-389 |
| 关键词 | characterization molecular beam epitaxy gallium compounds nitrides piezoelectric materials semiconducting gallium compounds MOLECULAR-BEAM EPITAXY HETEROSTRUCTURES SAPPHIRE DIODES |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang jx,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | high-quality gan epilayers were consistently obtained using a home-made gas-sourer mbe system on sapphire substrates. room-temperature electron mobility of the grown gan film is 300 cm(2)/v s with a background electron concentration as low as 2 x 10(17) cm(-3) the full-width at half-maximum of the gan (0 0 0 2) double-crystal x-ray rocking curve is 6 arcmin. at low temperature (3.5 k), the fwhm of the: near-band-edge photoluminescence emission line is 10 mev. furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a gan/aln/gan/sapphire structure. its room-temperature and low-temperature (77 k) electron mobility is 680 cm(2)/v s and 1700 cm(2)/v s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (c) 2001 published by elsevier science. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12170]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JX,Sun DZ,Wang XL,et al. High-quality GaN grown by gas-source MBE[J]. journal of crystal growth,2001,227(0):386-389. |
| APA | Wang JX.,Sun DZ.,Wang XL.,Li JM.,Zeng YP.,...&Lin LY.(2001).High-quality GaN grown by gas-source MBE.journal of crystal growth,227(0),386-389. |
| MLA | Wang JX,et al."High-quality GaN grown by gas-source MBE".journal of crystal growth 227.0(2001):386-389. |
入库方式： OAI收割
来源：半导体研究所
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