Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:501-505 |
| 关键词 | molecular beam epitaxy quantum wells semiconducting IIIV materials LUMINESCENCE GAASN |
| ISSN号 | 0022-0248 |
| 通讯作者 | sun bq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated transitions above and below band edge of ganas/gaas and inganas/gaas single quantum wells (qws) by photoluminescence (pl) as well as by absorption spectra via photovoltaic effects. the interband pl peak is observed to be dominant under high excitation intensity and at low temperature. the broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into inganas. in contrast to inganas/gaas qws, the measured interband transition energy of ganas/gaas qws can be well fitted to the theoretical calculations if a type-ii band lineup is assumed. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12174]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures[J]. journal of crystal growth,2001,227(0):501-505. |
| APA | Jiang DS.(2001).Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures.journal of crystal growth,227(0),501-505. |
| MLA | Jiang DS."Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures".journal of crystal growth 227.0(2001):501-505. |
入库方式： OAI收割
来源：半导体研究所
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