Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pan Z ; Li LH ; Zhang W ; Wang XU ; Lin YW ; Wu RH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:516-520 |
| ISSN号 | 0022-0248 |
| 关键词 | adsorption characterization radiation molecular beam epitaxy nitrides SURFACE-EMITTING LASER QUANTUM-WELLS OPERATION RANGE |
| 通讯作者 | pan z,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have studied the growth of gainnas/gaas quantum well (qw) by molecular beam epitaxy using a dc plasma as the n sourer. the n concentration was independent of the as pressure and the in concentration, but inversely proportional to the growth rate. it was almost independent of t, over the range of 400-500 degreesc, but dropped rapidly when t-g exceeded 500 degreesc. thermally-activated n surface segregation is considered to account for the strong falloff of the n concentration. as increasing n concentration, the steep absorption edge of the photovoltage spectra of gainnas/gaas qw became gentle, the full-width at half-maximum of the photoluminescence (pl) peal; increased rapidly, and a so-called s-shaped temperature dependence of pl peak energy showed up. all these were attributed to the increasing localized state as n concentration. ion-induced damage was one of the origins of the localized state. a rapid thermal annealing procedure could effectively remote the localized state. (c) 2001 elsevier science d.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12176]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Li LH,Zhang W,et al. Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy[J]. journal of crystal growth,2001,227(0):516-520. |
| APA | Pan Z,Li LH,Zhang W,Wang XU,Lin YW,&Wu RH.(2001).Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy.journal of crystal growth,227(0),516-520. |
| MLA | Pan Z,et al."Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy".journal of crystal growth 227.0(2001):516-520. |
入库方式： OAI收割
来源：半导体研究所
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