Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
文献类型：期刊论文
| 作者 | Gao F ; Lin YX ; Huang DD ; Li JP ; Sun DZ ; Kong MY ; Zeng YP ; Li JM ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:766-769 |
| 关键词 | annealing molecular beam epitaxy germanium silicon alloys semiconducting materials STRAIN RELAXATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | gao f,chinese acad sci,ctr mat sci,inst semicond,beijing 10083,peoples r china. |
| 中文摘要 | the effects of annealing time and si cap layer thickness: on the thermal stability of the si/sige/si heterostructures deposited by disilane and solid-ge molecule beam epitaxy were investigated. it is found that in the same strain state of the sige layers the annealing time decreases with increasing si cap layer thickness. this effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the si cap layer thickness. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12180]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao F,Lin YX,Huang DD,et al. Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability[J]. journal of crystal growth,2001,227(0):766-769. |
| APA | Gao F.,Lin YX.,Huang DD.,Li JP.,Sun DZ.,...&Lin LY.(2001).Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability.journal of crystal growth,227(0),766-769. |
| MLA | Gao F,et al."Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability".journal of crystal growth 227.0(2001):766-769. |
入库方式： OAI收割
来源：半导体研究所
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