Epitaxial growth of SiC on complex substrates
文献类型：期刊论文
| 作者 | Sun GS ; Li JM ; Luo MC ; Zhu SR ; Wang L ; Zhang FF ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:811-815 |
| 关键词 | optical microscopy X-ray diffraction molecular beam epitaxy semiconducting silicon compounds SAPPHIRE DEPOSITION FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | sun gs,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | epitaxial growth of sic on complex substrates was carried out at substrate temperature from 1200 degreesc to 1400 degreesc. three kinds of new complex substrates, c-plane sapphire, aln/sapphire, and gan/aln/sapphire, were used in this study. we obtained a growth rate in the range of 1-6 mum/h. thick (6 mum) sic epitaxial layers with no cracks were successfully obtained on aln/sapphire and gan/aln/sapphire substrates. x-ray diffraction patterns have confirmed that single-crystal sic was obtained on these complex substrates. analysis of optical transmission spectra of the sic grown on sapphire substrates shows the lowest-energy gap near 2.2 ev, which is the value for cubic sic. the undoped sic showed n-type electrical conductivity. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12182]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun GS,Li JM,Luo MC,et al. Epitaxial growth of SiC on complex substrates[J]. journal of crystal growth,2001,227(0):811-815. |
| APA | Sun GS.,Li JM.,Luo MC.,Zhu SR.,Wang L.,...&Lin LY.(2001).Epitaxial growth of SiC on complex substrates.journal of crystal growth,227(0),811-815. |
| MLA | Sun GS,et al."Epitaxial growth of SiC on complex substrates".journal of crystal growth 227.0(2001):811-815. |
入库方式： OAI收割
来源：半导体研究所
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