Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
文献类型：期刊论文
| 作者 | Niu ZC ; Wang XD ; Miao ZH ; Feng SL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:1062-1068 |
| 关键词 | crystal morphology quantum dots molecular beam epitaxy semiconducting gallium arsenide semiconducting indium gallium arsenide 1.35 MU-M GAAS-SURFACES PHOTOLUMINESCENCE ISLANDS |
| ISSN号 | 0022-0248 |
| 通讯作者 | niu zc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | red shifts of emission wavelength of self-organized in(cla)as/gaas quantum dots (qds) covered by 3 nm thick inxga1-xas layer with three different in mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. transmission electron microscopy images demonstrate that the stress along growth direction in the inas dots was reduced due to introducing the inxga1-xas (x = 0.1, 0.2 and 0.3) covering layer instead of gaas layer. atomic force microscopy pictures show a smoother surface of inas islands covered by an in0.2ga0.8as layer. it is explained by the calculations that the redshifts of the photoluminescence (pl) spectra from the qds covered by the inxga1-xas (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the inas/gaas intermixing in the inas qds. the temperature dependent pl spectra further confirm that the ingaas covering layer can effectively suppress the temperature sensitivity of pl emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcv at room temperature has been obtained successfully from in,in0.5ga0.5as/gaas self-assembled qds covered by a 3-nm in0.2ga0.2as strain reducing layer. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12188]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu ZC,Wang XD,Miao ZH,et al. Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer[J]. journal of crystal growth,2001,227(0):1062-1068. |
| APA | Niu ZC,Wang XD,Miao ZH,&Feng SL.(2001).Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer.journal of crystal growth,227(0),1062-1068. |
| MLA | Niu ZC,et al."Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer".journal of crystal growth 227.0(2001):1062-1068. |
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来源：半导体研究所
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