Self-assembled quantum dots, wires and quantum-dot lasers
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 227期号:0页码:1132-1139 |
| 关键词 | low dimensional structures strain molecular beam epitaxy quantum dots semiconducting III-V materials laser diodes WELL LASERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang zg,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | molecular beam epitaxy-grown self-assembled in(ga)as/gaas and inas/inalas/inp quantum dots (qds) and quantum wires (qwrs) have been studied. by adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. the lateral ordering of qds and the vertical anti-correlation of qwrs are theoretically discussed. room-temperature (rt) continuous-wave (cw) lasing at the wavelength of 960 nm with output power of 3.6 w from both uncoated facets is achieved fi-om vertical coupled inas/gaas qds ensemble. the rt threshold current density is 218 a/cm(2). a rt cw output power of 0.6 w/facet ensures at least 3570 h lasing (only drops 0.83 db). (c) 2001 elsevier science b.v, all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12190]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Self-assembled quantum dots, wires and quantum-dot lasers[J]. journal of crystal growth,2001,227(0):1132-1139. |
| APA | Xu B.(2001).Self-assembled quantum dots, wires and quantum-dot lasers.journal of crystal growth,227(0),1132-1139. |
| MLA | Xu B."Self-assembled quantum dots, wires and quantum-dot lasers".journal of crystal growth 227.0(2001):1132-1139. |
入库方式： OAI收割
来源：半导体研究所
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