Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:25页码:3974-3976 |
| 关键词 | MOLECULAR-BEAM EPITAXY SURFACE POLARITY SINGLE-CRYSTALS BUFFER LAYER GROWN GAN DEPOSITION MORPHOLOGY QUALITY ZNO |
| ISSN号 | 0003-6951 |
| 通讯作者 | han pd,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | gan films were grown in pairs on two opposite c faces of al2o3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. it is found that gan film on the c-al2o3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the c-al2o3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12198]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate[J]. applied physics letters,2001,78(25):3974-3976. |
| APA | Han PD.(2001).Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate.applied physics letters,78(25),3974-3976. |
| MLA | Han PD."Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate".applied physics letters 78.25(2001):3974-3976. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。