Thermodynamic model of hydrogen-induced silicon surface layer cleavage
文献类型：期刊论文
| 作者 | Han WH
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 89期号:11 part.1.页码:6551-6553 |
| 关键词 | INDUCED EXFOLIATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | han wh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded silicon wafer is proposed in this article. wafer splitting is the result of lateral growth of hydrogen blisters in the entire hydrogen-implanted region during annealing. the blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion. the hydrogen blister radius was studied as a function of annealing time, annealing temperature, and implantation dose. the critical radius was obtained according to the griffith energy condition. the time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12202]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han WH. Thermodynamic model of hydrogen-induced silicon surface layer cleavage[J]. journal of applied physics,2001,89(11 part.1.):6551-6553. |
| APA | Han WH.(2001).Thermodynamic model of hydrogen-induced silicon surface layer cleavage.journal of applied physics,89(11 part.1.),6551-6553. |
| MLA | Han WH."Thermodynamic model of hydrogen-induced silicon surface layer cleavage".journal of applied physics 89.11 part.1.(2001):6551-6553. |
入库方式： OAI收割
来源：半导体研究所
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