High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pan Z ; Li LH ; Du Y ; Lin YW ; Wu RH |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 18期号:5页码:659-661 |
| 关键词 | SURFACE-EMITTING LASER OPERATION RANGE |
| ISSN号 | 0256-307x |
| 通讯作者 | pan z,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | gainnas/gaas single-quantum-well (sqw) lasers have been grown by solid-source molecular beam epitaxy. n is introduced by a home-made de-active plasma source. incorporation of n into ingaas decreases the bandgap significantly. the highest n concentration of 2.6% in a gainnas/gaas qw is obtained, corresponding to the photoluminescence (pl) peak wavelength of 1.57 mum at 10 k. the pl peak intensity decreases rapidly and the pl full width at half maximum increases with the increasing n concentrations. rapid thermal annealing at 850 degrees c could significantly improve the crystal quality of the qws. an optimum annealing time of 5s at 850 degrees c was obtained. the galnnas/gaas sqw laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 k in the temperature range of 20 degrees c- 75 degrees c. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12204]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Li LH,Du Y,et al. High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy[J]. chinese physics letters,2001,18(5):659-661. |
| APA | Pan Z,Li LH,Du Y,Lin YW,&Wu RH.(2001).High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy.chinese physics letters,18(5),659-661. |
| MLA | Pan Z,et al."High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy".chinese physics letters 18.5(2001):659-661. |
入库方式： OAI收割
来源：半导体研究所
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