Shape evolution of Ge/Si(001) islands induced by strain-driven alloying
文献类型：期刊论文
| 作者 | Huang CJ ; Zuo YH ; Li DZ ; Cheng BW ; Luo LP ; Yu JZ ; Wang QM |
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:24页码:3881-3883 |
| 关键词 | TEMPERATURE-DEPENDENCE TRANSITION GROWTH GE SI(001) PATHWAY |
| ISSN号 | 0003-6951 |
| 通讯作者 | zuo yh,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | the shape evolution of ge/si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. we find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. while at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. the presence of the atomic intermixing between the ge islands and si substrate at high deposition rate is responsible for the reverse evolution. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12206]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang CJ,Zuo YH,Li DZ,et al. Shape evolution of Ge/Si(001) islands induced by strain-driven alloying[J]. applied physics letters,2001,78(24):3881-3883. |
| APA | Huang CJ.,Zuo YH.,Li DZ.,Cheng BW.,Luo LP.,...&Wang QM.(2001).Shape evolution of Ge/Si(001) islands induced by strain-driven alloying.applied physics letters,78(24),3881-3883. |
| MLA | Huang CJ,et al."Shape evolution of Ge/Si(001) islands induced by strain-driven alloying".applied physics letters 78.24(2001):3881-3883. |
入库方式： OAI收割
来源：半导体研究所
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