Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 225期号:1页码:45-49 |
| 关键词 | photoluminescence SEM epitaxial lateral overgrowth metalorganic chemical vapor deposition cubic GaN PHASE EPITAXY SELECTIVE GROWTH LASER-DIODES LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | fu y,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | the epitaxial lateral overgrowth (elo) of cubic gan by metalorganic chemical vapor deposition has been performed on sio2-patterned gan laver. the mechanism of lateral overgrowth is studied it was found that the morphology of elo gan stripes strongly depended on the direction of stripe window openings, which was discussed based on the different growth rates of (1 1 1)a and (1 1 1)b. under the optimized growth condition, single-phase cubic gan was deposited successfully. the peak position of near-band emission in elo gan has a redshift of 13 mev compared with the conventionally grown sample, which may be due to the partial release of stress during the elo process. (c) 2001 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12222]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition[J]. journal of crystal growth,2001,225(1):45-49. |
| APA | Zhao DG.(2001).Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition.journal of crystal growth,225(1),45-49. |
| MLA | Zhao DG."Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition".journal of crystal growth 225.1(2001):45-49. |
入库方式： OAI收割
来源：半导体研究所
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