中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural characterization of cubic GaN grown on GaAs(001) substrates

文献类型:期刊论文

作者Zheng XH ; Qu B ; Wang YT ; Yang H ; Liang JW ; Han JY
刊名chinese journal of electronics
出版日期2001
卷号10期号:2页码:219-222
关键词cubic GaN X-ray double crystal diffraction structural characteristics CONTINUOUS-WAVE OPERATION EPITAXIAL-GROWTH HEXAGONAL GAN LASER-DIODES THIN-FILMS MBE
ISSN号1022-4653
通讯作者zheng xh,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要structural characteristics of cubic gan epilayers grown on gaas(001) were studied using x-ray double-crystal diffraction technique. the structure factors of cubic gan(002) and (004) components are approximately identical. however, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. the discrepancy has been interpreted in detail considering other factors. in the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. these two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. moreover, the peak broadening was analysed by reciprocal lattice construction and eward sphere. by using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. the fully relaxed lattice parameter of cubic gan was determined to be about 0.451 +/- 0.001nm.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12230]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zheng XH,Qu B,Wang YT,et al. Structural characterization of cubic GaN grown on GaAs(001) substrates[J]. chinese journal of electronics,2001,10(2):219-222.
APA Zheng XH,Qu B,Wang YT,Yang H,Liang JW,&Han JY.(2001).Structural characterization of cubic GaN grown on GaAs(001) substrates.chinese journal of electronics,10(2),219-222.
MLA Zheng XH,et al."Structural characterization of cubic GaN grown on GaAs(001) substrates".chinese journal of electronics 10.2(2001):219-222.

入库方式: OAI收割

来源:半导体研究所

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