Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:17页码:2488-2490 |
| 关键词 | 1.3 MU-M OPTICAL-PROPERTIES BAND-GAP SUPERLATTICES LASERS GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | li lh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | effects of rapid thermal annealing and sio2 encapsulation on ganas/gaas single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. photoluminescence measurements on a series of samples with different well widths and n compositions were used to evaluate the effects. the intermixing of ganas and gaas layers was clearly enhanced by the presence of a sio2-cap layer. however, it was strongly dependent on the n composition. after annealing at 900 degreesc for 30 s, a blueshift up to 62 mev was observed for the sio2-capped region of the sample with n composition of 1.5%, whereas only a small blueshift of 26 mev was exhibited for the bare region. for the sample with the n composition of 3.1%, nearly identical photoluminescence peak energy shift for both the sio2-capped region and the bare region was observed. it is suggested that the enhanced intermixing is mainly dominated by sio2-capped layer induced defects-assisted diffusion for the sample with smaller n composition, while with increasing n composition, the diffusion assisted by interior defects become predominant. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12236]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy[J]. applied physics letters,2001,78(17):2488-2490. |
| APA | Xu YQ.(2001).Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy.applied physics letters,78(17),2488-2490. |
| MLA | Xu YQ."Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy".applied physics letters 78.17(2001):2488-2490. |
入库方式： OAI收割
来源：半导体研究所
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