Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
文献类型：期刊论文
| 作者 | Sheng SR ; Liao XB ; Kong GL |
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:17页码:2509-2511 |
| 关键词 | CONSTANT PHOTOCURRENT METHOD A-SI-H ABSORPTION FILMS SPECTROSCOPY DEPOSITION STABILITY DILUTION |
| ISSN号 | 0003-6951 |
| 通讯作者 | sheng sr,natl res council canada,inst microstruct sci,ottawa,on k1a 0r6,canada. |
| 中文摘要 | the effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-si:h) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. it is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 ev and a shoulder at about 1.2 ev below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. a concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. hydrogen-diluted and appropriately boron-compensated a-si:h films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12238]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sheng SR,Liao XB,Kong GL. Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation[J]. applied physics letters,2001,78(17):2509-2511. |
| APA | Sheng SR,Liao XB,&Kong GL.(2001).Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation.applied physics letters,78(17),2509-2511. |
| MLA | Sheng SR,et al."Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation".applied physics letters 78.17(2001):2509-2511. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。