Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 224期号:1-2页码:41-46 |
| 关键词 | nanostructures molecular beam epitaxy semiconducting III-V materials ELECTRON-PHONON INTERACTIONS TEMPERATURE-DEPENDENCE SEMICONDUCTOR NANOCRYSTALS CARRIER TRANSFER INAS GAAS LASERS ISLANDS GROWTH GAIN |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang yc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have fabricated a new self-assembled quantum dot system where ingaas dots are formed on inalas wetting layer and embedded in gaas matrix. the low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. in contrast to traditional inas/ga(al)as quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (c) 2001 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12240]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Optical properties of InGaAs quantum dots formed on InAlAs wetting layer[J]. journal of crystal growth,2001,224(1-2):41-46. |
| APA | Xu B,&Ye XL.(2001).Optical properties of InGaAs quantum dots formed on InAlAs wetting layer.journal of crystal growth,224(1-2),41-46. |
| MLA | Xu B,et al."Optical properties of InGaAs quantum dots formed on InAlAs wetting layer".journal of crystal growth 224.1-2(2001):41-46. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。