A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang XD ; Niu ZC ; Feng SL ; Miao ZH |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 18期号:4页码:608-610 |
| 关键词 | OPTICAL-PROPERTIES ROOM-TEMPERATURE CAP LAYER DOTS GAAS LUMINESCENCE |
| ISSN号 | 0256-307x |
| 通讯作者 | niu zc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | a self-organized in0.5ga0.5as/gaas quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (inas)(1)/gaas)(1)monolayer deposition method. the photoluminescence measurement shows that a very narrow linewidth of 19.2 mev at 300 k has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the in0.5ga0.5as island structure due to indium segregation reduction by introducing an alas layer and the strain reduction by inserting an in0.2ga0.8as layer overgrown on the top of islands. the mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12242]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Niu ZC,Feng SL,et al. A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy[J]. chinese physics letters,2001,18(4):608-610. |
| APA | Wang XD,Niu ZC,Feng SL,&Miao ZH.(2001).A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy.chinese physics letters,18(4),608-610. |
| MLA | Wang XD,et al."A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy".chinese physics letters 18.4(2001):608-610. |
入库方式： OAI收割
来源：半导体研究所
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