Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate
文献类型：期刊论文
| 作者 | Gao F ; Li GH ; Zhang JH ; Qin FG ; Yao ZY ; Liu ZK ; Wang ZG ; Lin LY |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 18期号:3页码:443-444 |
| 关键词 | OPTICAL-PROPERTIES THIN-FILMS DEPOSITION EMISSION LAYERS |
| ISSN号 | 0256-307x |
| 通讯作者 | gao f,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | a ceo2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an si(111) substrate. reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. the tetravalent state of ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric ceo2 was formed. violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of ceo2. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12246]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao F,Li GH,Zhang JH,et al. Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate[J]. chinese physics letters,2001,18(3):443-444. |
| APA | Gao F.,Li GH.,Zhang JH.,Qin FG.,Yao ZY.,...&Lin LY.(2001).Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate.chinese physics letters,18(3),443-444. |
| MLA | Gao F,et al."Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate".chinese physics letters 18.3(2001):443-444. |
入库方式： OAI收割
来源：半导体研究所
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