Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:15页码:2217-2219 |
| 关键词 | MOLECULAR-BEAM EPITAXY INGAASN LASER OPERATION ALLOYS GROWTH GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | pan z,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the optical transitions in ga1-yinynxas1-x/gaas single and multiple quantum wells using photovoltaic measurements at room temperature. from a theoretical fit to the experimental data, the conduction band offset q(c), electron effective mass m(e)*, and band gap energy e-g were estimated. it was found that the q(c) is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0-1)%. the m(e)* of gainnas is much greater than that of ingaas with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. our experimental results for the m(e)* and e-g of gainnas are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized n states. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12250]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration[J]. applied physics letters,2001,78(15):2217-2219. |
| APA | Jiang DS.(2001).Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration.applied physics letters,78(15),2217-2219. |
| MLA | Jiang DS."Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration".applied physics letters 78.15(2001):2217-2219. |
入库方式： OAI收割
来源：半导体研究所
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