中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well

文献类型:期刊论文

作者Tan PH
刊名physical review b
出版日期2001
卷号63期号:11页码:art.no.113305
关键词RESONANT-TUNNELING DIODES SPACER LAYERS SPECTROSCOPY DOTS HETEROSTRUCTURES
ISSN号1098-0121
通讯作者tang y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要we have studied the capacitance-voltage characteristics of an optically excited wide quantum well. both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. this quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined stark effect.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12252]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Tan PH. Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well[J]. physical review b,2001,63(11):art.no.113305.
APA Tan PH.(2001).Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well.physical review b,63(11),art.no.113305.
MLA Tan PH."Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well".physical review b 63.11(2001):art.no.113305.

入库方式: OAI收割

来源:半导体研究所

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