Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well
文献类型:期刊论文
作者 | Tan PH![]() |
刊名 | physical review b
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出版日期 | 2001 |
卷号 | 63期号:11页码:art.no.113305 |
关键词 | RESONANT-TUNNELING DIODES SPACER LAYERS SPECTROSCOPY DOTS HETEROSTRUCTURES |
ISSN号 | 1098-0121 |
通讯作者 | tang y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
中文摘要 | we have studied the capacitance-voltage characteristics of an optically excited wide quantum well. both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. this quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined stark effect. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12252] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Tan PH. Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well[J]. physical review b,2001,63(11):art.no.113305. |
APA | Tan PH.(2001).Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well.physical review b,63(11),art.no.113305. |
MLA | Tan PH."Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well".physical review b 63.11(2001):art.no.113305. |
入库方式: OAI收割
来源:半导体研究所
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