Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices
文献类型：期刊论文
| 作者 | Ye XL
|
| 刊名 | physical review b
 |
| 出版日期 | 2001 |
| 卷号 | 63期号:11页码:art.no.115317 |
| 关键词 | GIANT OPTICAL ANISOTROPY QUANTUM-WELLS COMMON-ATOM ZINCBLENDE SEMICONDUCTORS INVERSION ASYMMETRY HETEROSTRUCTURES |
| ISSN号 | 1098-0121 |
| 通讯作者 | ye xl,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | numerical calculations within the envelope function framework have been performed to analyze the relations between the magnitude of in-plane optical anisotropy and the values of the additional hole-mixing coefficients due to interface and electric field in (001) symmetric gaas/alxga1-xas superlattices for light propagating along the [001] direction. it is found that the heavy- and light-hole states are mixed independently by interface and electric field. the numeric results demonstrate that the line shape of the in-plane anisotropic spectrum is determined by the ratio of the two hole-mixing coefficients. theoretical analysis shows that with the help of simple calculation of the anisotropy at k=0, reliable values of the hole-mixing coefficients can be determined by reflectance-difference spectroscopy (ids) technique, demanding no tedious fitting of experimental curves. the in-plane optical anisotropy measured by rds provides a new method of getting the information on buried interfaces through the value of the hole-mixing coefficient due to interface. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12254]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL. Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices[J]. physical review b,2001,63(11):art.no.115317. |
| APA | Ye XL.(2001).Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices.physical review b,63(11),art.no.115317. |
| MLA | Ye XL."Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices".physical review b 63.11(2001):art.no.115317. |
入库方式： OAI收割
来源：半导体研究所
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