Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 223期号:4页码:518-522 |
| 关键词 | molecular beam epitaxy semiconductor III-V materials QUANTUM DOTS SURFACE-MORPHOLOGY LOW-THRESHOLD INP INP(001) LUMINESCENCE ORGANIZATION ISLANDS LAYER |
| ISSN号 | 0022-0248 |
| 通讯作者 | li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-assembled inas nanostructures on (0 0 1) inp substrate have been grown by molecular beam epitaxy (mbe) and evaluated by transmission electron microscopy (tem) and photoluminescence (pl). it is found that the morphologies and pl properties of inas nanostructures depend strongly on the growth condition. for the same buffer layer, elongated inas quantum wires (qwrs) and no isotropic inas quantum dots (qds) can be obtained using different growth conditions. at the same time, for inas quantum dots, pl spectra also show several emission peaks related to different islands size. theoretical calculation indicated that there are size quantization effects in inas islands. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12260]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy[J]. journal of crystal growth,2001,223(4):518-522. |
| APA | Xu B.(2001).Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy.journal of crystal growth,223(4),518-522. |
| MLA | Xu B."Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy".journal of crystal growth 223.4(2001):518-522. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。