InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Ye XL ; Xu B
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 89期号:7页码:4186-4188 |
| 关键词 | MATRIX ISLANDS INGAAS |
| ISSN号 | 0021-8979 |
| 通讯作者 | li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-assembled inas quantum dots (qds) have been grown by solid-source molecular beam epitaxy on a (311)b inp substrate. transmission electron microscopy clearly shows that a high density of smaller inas islands can be obtained by using such a high index substrate. after introducing a lattice-matched underlying in0.52al0.24ga0.24as layer, the inas qds are much more uniform in size and form two-dimensional well ordered arrays. the photoluminescence (pl) spectra also confirm that the inas qds grown on underlying in0.52al0.24ga0.24as have a better quality than those grown in the in0.52al0.48as matrix. a simple calculation indicates that the redshift of the pl peak energy mainly results from inas qds on underlying in0.52al0.24ga0.24as of large size. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12262]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy[J]. journal of applied physics,2001,89(7):4186-4188. |
| APA | Ye XL,&Xu B.(2001).InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy.journal of applied physics,89(7),4186-4188. |
| MLA | Ye XL,et al."InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy".journal of applied physics 89.7(2001):4186-4188. |
入库方式： OAI收割
来源：半导体研究所
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